Lithium drifted silicon detector fabrication on gettered Floating-Zone silicon

摘要

A gettering procedure using phosphorus doped glass is shown to remove lithium-ion precipitation sites from p-type Floating-Zone (FZ) silicon. A model involving interaction between grown-in vacancies and oxidation-injected silicon interstitials is proposed to explain the gettering procedure. Examples of silicon lithium-drifted detectors fabricated on ungettered and gettered FZ silicons are presented.