Study of charge distribution and atomic arrangement at interfaces using fast electron scattering

摘要

The principle of fast electron scattering at a potential step has been elucidated. It has been shown that electrons scattered in the near forward direction bring significant information of the potential step at an interface. Experiments have been shown where the interface between AlAs and GaAs in a MBE-grown sample is visible as a bright or dark line in the image, depending on the location of the dark field aperture. The asymmetric intensity distribution in reciprocal space has been shown using an improved phase grating approximation. The author puts forward the argument that neither the normal dark-field technique in the electron microscope nor the usual reciprocal space calculation techniques for image simulation are suited for this type of experiments. This argumentation is followed by the proposal of an improved dark field technique with high resolution in reciprocal space, and the development of a calculation technique (performed in real space) that is suitable for the calculation of electron scattering from non-periodic objects. 28 refs. (Atomindex citation 25:065631)