Determination of interface structure and bonding at atomic resolution in the STEM

摘要

The scanning transmission electron microscope can probe atomic dimensions of 2.2 (angstrom) at 100 kV and 1.3 (angstrom) at 300 kV, which is advantageous for complex interfaces such as grain boundaries. The Z-contrast image allows the high-Z column locations to be found by direct inspection and quantified through maximum entropy methods. Images of GaAs and SrTiO(sub 3) (bicrystal) and their analysis are discussed.