Copper CVD using liquid coinjection of (hfac)Cu(TMVS) and TMVS

摘要

Copper chemical vapor deposition using liquid coinjection of the Cu(I) precursor (hfac)Cu(TMVS) along with TMVS has been demonstrated. The coinjection of TMVS with (hfac)Cu(TMVS) stabilizes the Cu precursor until it enters the reaction chamber, allowing for better control of the deposition and faster deposition rates. Using this technique, we have grown films with as-deposited resistivities of 1.86 (plus minus) 0.04 (mu)(Omega)-cm, independent of film thickness. Deposition rates of well over 100 nm/min are possible. Good step coverage and gap fill down to 0.6 (mu)m lines is demonstrated, with gap fill being limited by the large Cu grain sizes in these films.