Bounding the total-dose response of modern bipolar transistors

机译：限制了现代双极晶体管的总剂量响应

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摘要

The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

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Kosier, S L; Wei, A; Schrimpf, R D; Combs, W E; Fleetwood, D M;
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年度 1994
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Bipolar transistors; EDB/426000; EDB/360605;

机译：双极晶体管; EDB / 426000; EDB / 360605;

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专利

1. Bounding the total-dose response of modern bipolar transistors [J] . Kosier S.L., Combs W.E. IEEE Transactions on Nuclear Science . 1994,第6期

机译：限制现代双极晶体管的总剂量响应
2. Trends in the total-dose response of modern bipolar transistors [J] . Nowlin R.N., Enlow E.W. IEEE Transactions on Nuclear Science . 1992,第6期

机译：现代双极晶体管的总剂量响应趋势
3. The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers [J] . Cizmarik R.R., Schrimpf R.D., Fleetwood D.M., IEEE Transactions on Nuclear Science . 2005,第5期

机译：机械应力对具有各种钝化层的线性双极型晶体管总剂量响应的影响
4. Recent advances in understanding total-dose effects in bipolar transistors [C] . Schrimpf, R.D. . 1996

机译：了解双极型晶体管总剂量效应的最新进展
5. Total-dose gain degradation in modern bipolar transistors. [D] . Nowlin, Robert Nathaniel. 1993

机译：现代双极晶体管的总剂量增益下降。
6. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors [O] . Sufi Zafar, Minhua Lu, Ashish Jagtiani -1

机译：电化学传感器中场效应晶体管和双极结晶体管作为传感器的比较
7. Total-dose gain degradation in modern bipolar transistors. [O] . Nowlin Robert Nathaniel. 1993

机译：现代双极型晶体管的总剂量增益下降。
8. Bounding the total-dose response of modern bipolar transistors [R] . Kosier, S. L., Wei, A., Schrimpf, R. D., 1994

机译：限制了现代双极晶体管的总剂量响应

Bounding the total-dose response of modern bipolar transistors

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