New diode wavelengths for pumping solid-state lasers

摘要

High-power laser-diode arrays have been demonstrated to be viable pump sources for solid-state lasers. The diode bars (fill factor of 0.7) were bonded to silicon microchannel heatsinks for high-average-power operation. Over 12 W of CW output power was achieved from a one cm AlGaInP tensile-strained single-quantum-well laser diode bar. At 690 nm, a compressively-strained single-quantum-well laser-diode array produced 360 W/cm(sup 2) per emitting aperture under CW operation, and 2.85 kW of pulsed power from a 3.8 cm(sup 2) emitting-aperture array. InGaAs strained single-quantum-well laser diodes emitting at 900 nm produced 2.8 kW pulsed power from a 4.4 cm(sup 2) emitting-aperture array.