Ultrahigh spatial-frequency, high-contrast periodic structures produced by interference lithography

摘要

We have developed a process to produce high-aspect ratio, high- frequency periodic profiles recorded in a photoresist layer by interference lithography. We are able to independently control the period, duty cycle, and sidewall angle of the profiles. High-contrast diazonapthoquinone-based photoresist and single mode operation of the exposure laser are critical. The high-aspect ratio profiles are necessary for many applications such as transfer etch masks for etching oxides and field emitter array patterning. 5 refs., 5 figs.