Metallization and packaging of compound semiconductor devices at Sandia National Laboratories

摘要

Recent advances in compound semiconductor technology utilize a variety of metal thin films fabricated by thermal and electron-beam evaporation, and electroplating. An overview of metal processes used by Sandia's Compound Semiconductor Research Laboratory is presented. Descriptions of electrical n-type and p-type ohmic contact alloys, interconnect metal, and metal layers specifically included for packaging requirements are addressed. Several illustrations of devices incorporating gold plated air bridges are included. ''Back-end'' processes such as flip-chip under bump metallurgy with fluxless solder reflow and plated solder processes are mentioned as current research areas.