Synthesis, optical properties, and microstructure of semiconductor nanocrystals formed by ion implantation

摘要

High-dose ion implantation, followed by annealing, has been shown to provide a versatile technique for creating semiconductor nanocrystals encapsulated in the surface region of a substrate material. The authors have successfully formed nanocrystalline precipitates from groups IV (Si, Ge, SiGe), III-V (GaAs, InAs, GaP, InP, GaN), and II-VI (CdS, CdSe, CdS(sub x)Se(sub 1(minus)x), CdTe, ZnS, ZnSe) in fused silica, Al(sub 2)O(sub 3) and Si substrates. Representative examples will be presented in order to illustrate the synthesis, microstructure, and optical properties of the nanostructured composite systems. The optical spectra reveal blue-shifts in good agreement with theoretical estimates of size-dependent quantum-confinement energies of electrons and holes. When formed in crystalline substrates, the nanocrystal lattice structure and orientation can be reproducibly controlled by adjusting the implantation conditions.