Spin-Polarized Electron Emission from Superlattices with Zero Conduction Band Offset

摘要

Electron spin polarization as high as 86% has been reproducibly obtained from strained Al{sub x}In{sub y}Ga{sub 1-x-y}As/GaAs superlattice with minimal conduction band offset at the heterointerfaces. The modulation doping of the SL provides high polarization and high quantum yield at the polarization maximum. The position of the maximum can be easily tuned to an excitation wavelength by choice of the SL composition. Further improvement of the emitter parameters can be expected with additional optimization of the SL structure parameters.