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Mass Enhancement of Two-Dimensional Electrons in Thin Oxide Si-MOSFETs; Journal of Applied Physics

机译：薄氧化物si-mOsFET中二维电子的质量增强;应用物理学报

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摘要

We report in this paper a study of the effective mass in thin oxide Si- MOSFETs, using the temperature dependence of the Shubnikov-de Haas (SdH) effect and following the methodology developed by Smith and Stiles.

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作者
Draper, B. L. ; Pan, W. ; Tsui, D. C.;
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年度 1998
页码 1-15
总页数 15
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
MOSFET; Electrons; Two dimensional; Silicon Oxides; Shubnikov-de Haas Effect;

机译：mOsFET;电子;二维;氧化硅; shubnikov-de Haas效应;

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专利

1. Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET's [J] . Pan W., Draper BL., Tsui DC. Physical Review, B. Condensed Matter . 1999,第15期

机译：薄氧化物Si-MOSFET中二维电子的质量增强
2. Quasiparticle mass enhancement and Fermi surface shape modification in oxide two-dimensional electron gases [J] . John R. Tolsma, Alessandro Principi, Reza Asgari, Physical review . 2016,第4期

机译：氧化物二维电子气中的准粒子质量增强和费米表面形状修饰
3. Quasiparticle mass enhancement and Fermi surface shape modification in oxide two-dimensional electron gases [J] . Tolsma John R., Principi Alessandro, Asgari Reza, Physical review, B . 2016,第4期

机译：氧化物二维电子气中的准粒子质量增强和费米表面形变
4. Electron effective mass enhancement in ultrathin gate-oxide Si-MOSFETs [C] . M. Dragosavac, D. J. Paul, M. Pepper, International Conference on the Physics of Semiconductors . 2005

机译：超薄栅极氧化物Si-MOSFET中的电子有效质量增强
5. Using electronic bulletin boards and journals to enhance pre-service teachers self-efficacy and attitudes toward the use of computers. [D] . Burkett, Ruth S. 2002

机译：使用电子公告板和日记来提高岗前教师的自我效能和对使用计算机的态度。
6. Engineering the electronic structure of two-dimensional subnanopore nanosheets using molecular titanium-oxide incorporation for enhanced photocatalytic activity [O] . Xiuli Lu, Kun Xu, Shi Tao, 2016

机译：使用分子二氧化钛掺入来增强二维光催化活性的二维亚纳米孔纳米片的电子结构
7. Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET's [O] . Pan, W., Tsui, D. C., Draper, B. L. 1999

机译：薄氧化物si-mOsFET中二维电子的质量增强

Mass Enhancement of Two-Dimensional Electrons in Thin Oxide Si-MOSFETs; Journal of Applied Physics

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