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Measurement bias dependence of enhanced bipolar gain degradation at low dose rates

机译:测量偏差依赖于低剂量率下增强的双极增益降低

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摘要

Oxide trapped charge, field effects from emitter metallization, and high level injection phenomena moderate enhanced gain degradation of lateral pnp transistors at low dose rates. Hardness assurance tests at elevated irradiation temperatures require larger design margins for low power measurement biases.

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