X-ray microscopy: An emerging technique for semiconductor microstructure characterization

摘要

The advent of third generation synchrotron radiation x-ray sources, such as the Advanced Light Source (ALS) at Berkeley have enabled the practical realization of a wide range of new techniques in which mature chemical or structural probes such as x-ray photoelectron spectroscopy (XPS) and x-ray diffraction are used in conjunction with microfocused x-ray beams. In this paper the characteristics of some of these new microscopes are described, particularly in reference to their applicability to the characterization of semiconductor microstructures.