Silicon Schottky Diode Safe Operating Area.

机译：硅肖特基二极管安全工作区。

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摘要

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacementdamage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

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Casey, M. C.; Lauenstein, J.; Ladbury, R. L.; Wilcox, E. P.; Phan, A. M.; Label, K. A.;
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年度 2016
页码 1-16
总页数 16
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Schottky diodes; Heavy ions; Electro-optics; Silicon; Degradation; Electric potential; Displacement; Dosage; Damage;

机译：肖特基二极管;重离子;电光学;硅;降解;电势;位移;剂量;损伤;
入库时间 2022-08-29 10:46:13

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1. Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes [J] . Kinnock V. Munthali, Chris Theron, F. Danie Auret, Materials Science and Engineering . 2014,第FEBa期

机译：钌与碳化硅的固相反应及其作为高温运行肖特基二极管的肖特基接触的意义
2. A compact and low-driving-voltage silicon electro-absorption modulator utilizing a Schottky diode operating up to 13.2 GHz in C-band [J] . Jeong Uiseok, Kim Kwangwoong, Lee Kyungwoon, Japanese journal of applied physics . 2020,第12期

机译：一种紧凑且低驱动 - 电压硅电吸收器，利用肖特基二极管在C波段中操作高达13.2 GHz
3. Effect of ultrasonic treatment of silicon impatt diodes, power schottky diodes and zener diodes on their electrical characteristics [J] . Tagaev M.B Украинский физический журнал . 2000,第3期

机译：超声处理硅爆轰二极管，功率肖特基二极管和齐纳二极管对其电学特性的影响
4. On the safe operating area of power Schottky diodes in avalanche conditions [C] . Irace A., Breglio G., Spirito P., International Conference on Semantic Technology and Information Retrieval . 2011

机译：在雪崩条件下电力肖特基二极管的安全工作区
5. Electrical characterization of Schottky barrier diodes on heteroepitaxial 3C-silicon carbide grown on silicon substrates. [D] . Kim, Byeung Chul. 2008

机译：在硅衬底上生长的异质外延3C碳化硅上的肖特基势垒二极管的电学特性。
6. Junction investigation of graphene/silicon Schottky diodes [O] . Muatez Mohammed, Zhongrui Li, Jingbiao Cui, 2012

机译：石墨烯/硅肖特基二极管的结研究
7. Nanoparticle ink‐based silicon Schottky diodes operating up to 2.84 GHz [O] . Laura Kühnel, Kevin Neumann, Julian Neises, 2020

机译：纳米粒子墨水的硅肖特基二极管运行高达2.84 GHz
8. Silicon Schottky Diode Safe Operating Area. [R] . Casey, M. C., Campola, M. J., Lauenstein, J., 2016

机译：硅肖特基二极管安全工作区。

Silicon Schottky Diode Safe Operating Area.

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