Pressure dependence of defect emissions and the appearance of pressure-induceddeep centers in chalcopyrite alloys AgxCu1-xGaS2

摘要

We present the pressure dependence of the defect emissions in the chalcopyritealloy semiconductor Ag(sub x)Cu(sub 1-x)GaS(sub 2) for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy concentration x=0.25 deep levels were found to appear under pressure. Plausible explanations of our results have been proposed.