Unusual Conduction Band Minimum Formation of Ga(As(0.5-y)P(0.5-y) N(2y))Alloys;Physical Review Letters

摘要

The conduction band minimum formation of Ga(As0.5-deltaP0.5-yN2y) is investigated for small nitrogen compositions (0.1%<2y<1.0%), by using a pseudopotential technique. This formation is caused by two unusual processes both involving the deep-gap impurity level existing in the dilute alloy limit y -> 0. The first process is an anticrossing with the Gamma1c-like extended state of Ga(As0.5P0.5). The second process is an interaction with other impurity levels forming a subband. These two processes are expected to occur in any alloys exhibiting a deep-gap impurity level at one of its dilute limit.