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Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers

机译:新开发的GaN pendeo外延层的优异结构质量

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Transmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3 degrees tilt between wing and seed areas, caused by additional nucleation on the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.

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