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LINEAR-LOG COUNTING-RATE METER UTILIZING THE TRANSCONDUCTANCE CHARACTERISTICS OF A SILICON PLANAR TRANSISTOR,

机译：利用硅平面晶体管的跨导特性的线性计数 - 速率计，

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作者
eichholz,john j.;
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作者单位

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年度 1967
页码 1-43
总页数 43
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
count-rate meters; transistors; transistors; radiation measurement systemsanl-6968;

机译：计数率计;晶体管;晶体管;辐射测量系统anl-6968;

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专利

1. The logarithmic-diode counting-rate meter and period meter [J] . Barrow Bruce B. American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the . 1957,第4期

机译：对数二极管计数率计和周期计
2. Improvements in current gain and breakdown characteristics of silicon planar power transistors [J] . Balain K.S., Jasuja K.L., Shekhawat S.S., Electronic and Radio Engineers, Proceedings of the Indian Division of the Institution of . 1968,第3期

机译：硅平面功率晶体管的电流增益和击穿特性的改善
3. Process‐Introduced Structural Defects and Junction Characteristics in N P N Silicon Epitaxial Planar Transistors [J] . Jungbluth E. D., Wang P. Journal of Applied Physics . 1965,第6期

机译：N P N硅外延平面晶体管的工艺引入的结构缺陷和结特性
4. Transconductance Enhancement by Utilizing Pattern Dependent Oxidation in Silicon Nanowire Field-Effect Transistors [C] . A. Seike, T. Tange, I. Sano, Electrochemical Society(ECS) Meeting;International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment; 20080518-22;20080518-22; Phoenix,AZ(US);Phoenix,AZ(US) . 2008

机译：利用硅纳米线场效应晶体管中依赖于模式的氧化来增强跨导
5. Design and fabrication of a high-voltage normally-off planar 4H-silicon carbide vertical junction field-effect transistor. [D] . Fursin, Leonid. 2005

机译：高压常关型平面4H碳化硅垂直结场效应晶体管的设计与制造。
6. Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device [O] . Sejoon Lee, Youngmin Lee, Changmin Kim -1

机译：基于硅的负差分跨导器件中的非凡传输特性和多值逻辑函数
7. On the transconductance of polysilicon thin film transistors [O] . Panwar Alka, Tyagi B.P. 2011

机译：关于多晶硅薄膜晶体管的跨导

LINEAR-LOG COUNTING-RATE METER UTILIZING THE TRANSCONDUCTANCE CHARACTERISTICS OF A SILICON PLANAR TRANSISTOR,

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