The Use of Laser Reflections to Characterize Surface Morphology Changes

摘要

The morphological changes occurring during vaporization from the (0001) (hexagonal cell basis) surface of arsenic were studied using optical and electron microscopy in conjunction with laser reflections and x-ray diffraction. Equilateral triangular and truncated equilateral triangular etch pits formed on the (0001) surface as the crystal was evaporated at temperatures of 270 to 290 C in a static vacuum. A constant angle of 12° was observed between the (0001) plane and the etch-pit plane which was modelled as a stepped, high-index plane (101 λ), λ= 14 to 20, consisting of (1010) ledges and (0001) terraces.