Technique for Sputtering Conductive In2O3-SnO2 Transparent Films

摘要

The technique and apparatus used for sputtering In2O3 - SnO2 (ITO) films are discussed. Films typically exhibiting bulk resistivities in the range of 2 - 4 × 10-4Ω.cm and sheet resistivities as low as 0.5Ω/square have been obtained. The visible light transmission of the films is very high and adherence to a variety of optically polished substrates is excellent. Sputtered ITO films do not require postdeposition annealing or vacuum reduction treatment.