首页> 美国政府科技报告 >Analysis of Effects of Impurities Intentionally Incorporated into Silicon. Final Report, Feburary 1, 1977--December 1, 1977
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Analysis of Effects of Impurities Intentionally Incorporated into Silicon. Final Report, Feburary 1, 1977--December 1, 1977

机译:有意掺入硅中的杂质效应分析。最终报告,1977年2月1日 - 1977年12月1日

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摘要

A methodology has been developed and implemented to allow silicon samples containing intentionally incorporated impurities to be fabricated into finished solar cells under carefully controlled conditions. The electrical and spectral properties were then measured for each group processed, and this data, along with all the material, (cells and scrap) were delivered to JPL for further analysis. All 33 lots of Group ''C'', 14 lots of Group ''CM'' and 16 lots of Group ''F'' have been fabricated into cells, tested and delivered to JPL. (ERA citation 03:042437)

著录项

  • 作者

    Uno, F.;

  • 作者单位
  • 年度 1977
  • 页码 1-25
  • 总页数 25
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工业技术;
  • 关键词

  • 入库时间 2022-08-29 11:37:55

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