PROCESSING OF POLY-Si ELECTRODES FOR CHARGE-COUPLED DEVICES

摘要

A technique has been developed to fabricate poly-Si electrodes for charge-coupled devices. By controlling the microstructure of a poly-Si film, an anisotropic etchant was selected to provide essentially uniform electrode width dimensions. The electrode widths have only a 6% variation for the majority of the devices over the area of a 2 inch silicon wafer.