首页> 美国政府科技报告 >DEVELOPMENT AND EVALUATION OF DIE MATERIALS FOR USE UN THE GROWTH OF SILICON RIBBONS BY THE INVERTED RIBBON GROWTH PROCESS-TASK ll-LSSA PROJECT Quarterly Report No. 5 for October 1 -December 31,1978
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DEVELOPMENT AND EVALUATION OF DIE MATERIALS FOR USE UN THE GROWTH OF SILICON RIBBONS BY THE INVERTED RIBBON GROWTH PROCESS-TASK ll-LSSA PROJECT Quarterly Report No. 5 for October 1 -December 31,1978

机译:开发与模具材料为硅带利用联合国成长性评价由反相的带生长过程的任务LL-Lssa项目季第5号报告10月1日 - 12月31,1978

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Several ribbon growth experiments were performed in the Mark II ribbon growth facility from V-shaped dies coated with CVD Si3N4. The most signifi¬cant result was the ability to perform five consecutive growth "runs" from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4.nSilicon oxynitride, "Si2N20," was examined with respect to thermal stability in contact with molten silicon„ The results of x-ray analysis in¬dicate that this material is converted to both a- and β-Si3N4 in the presence of molten silicon. The latter phase is the dominant phase.

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