Determination of PSEUDOGAP State Density and Carrier Mobility in R.F. Sputtered Amorphous Silicon. Quarterly Technical Progress Report, July 1, 1979-September 30, 1979

摘要

Apparatus has been designed and assembled to perform field effect measurements using two different sample configurations. Preliminary measurements indicate that the field effect response is smaller than expected in view of the results quoted by other workers on silane-derived a-Si:H and the overall similarity in other opto-electronic properties. Some inconsistency has been observed between nominally identical samples, which may be related either to uncontrolled variables of our deposition process or to some unknown impurities present. Computer programs have been developed to analyze the ray data and derive a density of states versus energy. Using the data obtained so far, we have studied the effect of the assumed potential distribution inside the semiconductor and of the choice of the flat band voltage V/sub FB/ on the derived density of states. The equipment for the measurement of the time of flight drift mobility has been ordered but has not yet arrived. (ERA citation 06:016643)