Bias Factors for Radiation Creep, Growth and Swelling

摘要

Central to the present concepts of the origin of the radiation-induced creep, growth and swelling phenomena is the relative interaction of interstitials and vacancies with various sinks. Radiation-induced climb of dislocations, which figures in many theories of radiation creep and growth, requires the absorption of an excess of either vacancies or interstitials. On the other hand, radiation swelling requires the absorption of an excess of vacancies to affect void growth. These relative preferences are normally expressed in theoretical models by certain bias factors, or capture efficiencies, usually assumed to be constant. Several attempts have been made to estimate their magnitude theoretically but all are seen to involve errors or physically unrealistic assumptions. We present here a unified treatment in which these various bias factors are estimated in a self-consistent model which incorporates, for the first time, all the essential physics, i.e., defect production, interactions of both vacancies and interstitials with sinks and the presence of two types of sinks. We present quantitative evaluations for the SIPA creep model and for radiation swelling, and compare with previous estimates of these phenomena. (ERA citation 04:047016)