Power Take-off Analysis for Diagonally Connected MHD Channels

摘要

The electrical loading of the power take-off region of diagonally connected MHD channels is investigated by a two-dimensional model. The study examines the loading schemes typical of those proposed for the U-25 and U-25 Bypass channels. The model is applicable for the following four cases: (1) connection with diodes only, (2) connection with diodes and equal resistors, (3) connection with diodes and variable resistances to obtain a given current distribution, and (4) connection with diodes and variable resistors under changing load. The analysis is applicable for the power take-off regions of single or multiple-output systems. The general behaviors of the current and the potential distributions in all four cases are discussed. The analytical results are in good agreement with the experimental data. It is found possible to design the electrical circuit of the channel in the take-off region so as to achieve a fairly even load current output under changing total load current. (ERA citation 05:015955)