Investigation of Proposed Process Sequence for the Array Automated Assembly Task: Phase II. Quarterly Technical Progress Report for Quarter Ending December 29, 1979

摘要

A sulfur hexaflouride plasma etch was investigated as a possible surface treatment to improve the performance of the cell, the Radiation Technology Infrared Furnace was qualified for use in the process sequence, and work was initiated on junction clean up by laser scribing through the junction. An evaluation of the minority carrier diffusion length of silicon crystals received from various vendors was also included in this quarters activities. Results are presented and discussed. (ERA citation 05:031801)