Appraisal of Some Foil Surface Sink Strengths

摘要

The definition of the strengths of the various sinks for point defects, in the microstructure evolving during radiation damage processes, is crucial to the rate theory of void swelling, irradiation creep and growth. Generally, the sink strength expressions have been obtained by ignoring bulk recombination of point defects in their derivation. In the special case of the sink strengths for the surface of a thin foil, as used in high voltage electron microscope studies, two sink strengths have been proposed including bulk recombination in their derivation. Hence, in the present study, we compare in some detail the performance of the available thin foil sink strengths relative to numerical spatial calculations of irradiation growth in zirconium. It is concluded that a sink strength recently derived by Wood et al. is the most accurate available, although a simpler expression derived without bulk recombination performs well and can be recommended for most applications. (Atomindex citation 12:591363)