Upset and Latchup Thresholds in CD-4000 Series CMOS Devices. IRT 4337-007

摘要

A test program designed to verify that neutron irradiation and subsequent anneal is an effective method for suppressing ionization-induced latchup yielded as a byproduct a large body of data covering the upset and latchup thresholds of non-neutron-irradiated bulk CMOS devices. Sixty-six part types in the hardened RCA CD-4000 series and four National Semiconductor part types were tested. Upset levels ranged from 2-200 rad(Si). Latchup was observed in forty of the seventy part types tested. Latchup thresholds ranged from 9 to 708 rad(Si). Latchup currents ranged from 15 mA to 1.9 A. (ERA citation 05:027609)