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Normal-State Electronic Properties of Sn sub 0 sub 12 Eu sub 1 sub 08 Mo sub 6 S sub 8 at Low Temperature and High Pressure

机译:低温高压下sn sub 0 sub 12 Eu sub 1 sub 08 mo sub 6 s sub 8的正常状态电子特性

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The Hall coefficient and resistivity of Sn sub 0 sub 12 Eu sub 1 sub 08 Mo sub 6 S sub 8 have been measured over the range 1.5 < T < 300 K under hydrostatic pressure up to 5.3 kbar. The data suggest thermally-activated conduction, but in all cases the carrier concentration saturates at approx. 10 exp 22 holes/cm exp 3 for T > 100 K. A band model is proposed which is qualitatively consistent with the data. (ERA citation 81:025951)

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