Photochemical Energy Storage: Studies of Inorganic Photoassistance Agents. Progress Report, December 17, 1980-September 14, 1981

摘要

Work during the current contract period has concerned the use of certain n- and p-type semiconductors, including Si, InP, WS sub 2 , TiO sub 2 , and SrTiO sub 3 , as photoelectrode materials in photoelectrochemical cells for optical energy conversion. Additionally, intrinsic a-Si:H on a stainless steel substrate has been characterized where the contact to the stainless steel is a thin, heavily doped n-type layer resulting in an ohmic contact near the conduction band. Study of p-type Si bearing a redox polymer/Pt(O) or Pd(O) catalyst system has been ongoing and improvements in photoelectrochemical H sub 2 generation via surface catalysis has been demonstrated. Highlights of the accomplishments so far are: (1) the demonstration that n-type WS sub 2 -based photoelectrochemical cells can be used to sustain the uphill conversion of SO sub 2 and H sub 2 O to H sub 2 SO sub 4 and H sub 2 in 50% by weight H sub 2 SO sub 4 ; (2) establishment of the behavior of photoconductor (a-Si:H) electrodes in contact with liquid electrolytes. (ERA citation 07:014001)