Does-Enhancement Effects in MOSFET IC'S for Standard exp 60 Co Exposure Facilities

摘要

CMOS dosimeters sensitized to ionizing radiation by ion implantation have demonstrated dose enhancement of 55 percent in typical exp 60 Co facilities. Pairs of these IC's, one type with an alumina lid over the silicon chip and the other with a gold-kovar lid were used to evaluate this effect. Additional tests with a 1.3-mm-thick lead filter show that the enhancement is predominately induced by low-energy components in the radiation fields. (ERA citation 08:042842)