Multivalley Effective Mass Theory for Donors in Si under Applied Stress

摘要

An effective mass theory is presented for donors in Si subject to a unaxial stress along the (100) direction. An expression for the donor ground state energy suitable for variational calculation is presented, taking into account the Umklapp terms which are neglected in the conventional effective mass theory. The effect of stress on the conduction band valleys is handled as valley repopulation effect on the lines of Wilson and Feher. (Atomindex citation 16:060268)