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Electron Energy Levels in GaAs/Gasub(1-X)A1sub(X)As Heterojunctions. 2: Optical Properties

机译：Gaas / Gasub（1-X）a1sub（X）中的电子能级作为异质结。 2：光学特性

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The oscillator strength for electric-dipole transitions and the photoionization cross-section of impurities in GaAs/Gasub(1-x)A1sub(x)As heterojunctions are calculated. (Atomindex citation 16:020631)

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作者
Godwin, V. E.; Tomak, M.;
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年度 1984
页码 1-16
总页数 16
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium Arsenides; Heterojunctions; Aluminium Arsenides; Cross Sections; Doped Materials; E1-Transitions; Impurities; Optical Properties; Oscillator Strengths; Photoionization; Trace Amounts;

机译：砷化镓;异质结;铝砷;截面;掺杂材料; E1-转变;杂质;光学性质;振荡器强度;光电离;痕量;

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专利

1. Ab-initio investigation of structural, electronic and optical properties of In_xGa_(1-x)As, GaAs_(1-y)P_y ternary and In_xGa_(1-x)As_(1-y)P_y quaternary semiconductor alloys [J] . M. Othman, E. Kasap, N. Korozlu Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2010,第1a2期

机译：从头开始研究In_xGa_（1-x）As，GaAs_（1-y）P_y三元和In_xGa_（1-x）As_（1-y）P_y四元半导体合金的结构，电子和光学性质
2. Electronic and optical properties of strained In_xGa_(1-x)As/GaAs and strain-free GaAs/Al_(0.3)Ga_(0.7)As quantum dots on (110) substrates [J] . Ranber Singh, Gabriel Bester Physical review . 2013,第7期

机译：（110）衬底上应变In_xGa_（1-x）As / GaAs和无应变GaAs / Al_（0.3）Ga_（0.7）As量子点的电子和光学性质
3. Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots [J] . Kalliakos S, Pellegrini V, Garcia CP Nano letters . 2008,第2期

机译：AlGaAs / GaAs量子点中少数电子的能级结构的光学控制
4. A comparison of deep level effects on the DC characteristics of In/sub x/Ga/sub 1-x/P/In/sub 0.20/Ga/sub 0.80/As/GaAs and Al/sub 0.24/Ga/sub 0.76/As/In/sub 0.20/Ga/sub 0.80/As/GaAs high electron mobility transistors grown by solid source MBE [C] . Yoon, S.F., Yip, Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On . 2001

机译：深水平对In / sub x / Ga / sub 1-x / P / In / sub 0.20 / Ga / sub 0.80 / As / GaAs和Al / sub 0.24 / Ga / sub 0.76 / As的DC特性的比较固态源MBE生长的/ In / sub 0.20 / Ga / sub 0.80 / As / GaAs高电子迁移率晶体管
5. Investigating Optical and Electronic Properties of GaAsBi for Photovoltaics [D] . Lenney, Samuel L. 2020

机译：调查Gaasbi的光伏电子性能
6. Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure [O] . Xiaolong Zhou, Yonghai Chen, Bo Xu 2011

机译：非对称InAs / InGaAs / GaAs孔内结构电子态能级的光学识别
7. Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots [O] . Kalliakos, Sokratis, Pellegrini, Vittorio, Garcia, Cesar Pascual, 2008

机译：光电控制中少量电子的能级结构 alGaas / Gaas量子点
8. Electron Energy Levels in GaAs/Gasub(1-X)A1sub(X)As Heterojunctions. 1 [R] . Tomak, M., Godwin, V. E. 1984

机译：Gaas / Gasub（1-X）a1sub（X）中的电子能级作为异质结。 1

Electron Energy Levels in GaAs/Gasub(1-X)A1sub(X)As Heterojunctions. 2: Optical Properties

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