Transient Two-Dimensional Simulation of SEU in a CMOS SRAM Cell

摘要

Two-dimensional transient simulations of cosmic ion strikes on sensitive junctions of a CMOS SRAM have been carried out. The calculations determine time responses for transport variables of the four cross-coupled transistors and reveal the conditions for change of state or upset. 4 refs., 5 figs. (ERA citation 10:031814)