Exafs Study of C-Si, a-Si and a-Si:H

摘要

In order to determine the role played by the hydrogen atoms in a-Si:H, short range order has been investigated using Exafs at the silicon K-edge. Emphasis has been put on topological disorder; low temperature measurements allowed us to look at its variations. Concerning hydrogen, a non homogeneous distribution has been deduced and a 2-d or l-d repartition consistent with both theoretical prediction and small angle neutron scattering data is proposed. (ERA citation 12:020178)