Modification of Point Defects in Quartz for Device Applications.

摘要

Impurity centers in quartz play a significant role in the behavior of precision crystal resonators subjected to ionizing radiation. The substitutional Al center, charge-compensated by Na, Li, H, or a hole, is now known to be the primary contributing factor in most radiation-induced effects. Acoustic loss measurements, Electron Spin Resonance measurements, optical studies, and infrared studies of these defects, over extended temperature ranges, have contributed substantially to our understanding of the role of impurity centers. Radiation-induced frequency and acoustic loss changes in quartz-crystal resonators are now understood in terms of the evolving character of the defect center in a radiation field. This understanding has prompted such material modifications as high-temperature electrolysis and doping technologies that permit, for instance, the fabrication of frequency control devices that are little affected by hostile environments. (ERA citation 11:023077)