Preparation of Thin Films for Photovoltaic Conversion by Novel MOCVD Techniques: Final Subcontract Report, March 1987

摘要

Details are presented for the chemical vapor deposition of a range of thin film materials for potential photovoltaic device applications. It is shown that the CVD/MOCVD approach is capable of yielding thin films of ZnO(In), Zn/sub x/Cd/sub 1-x/S.(In), and the binary and ternary sulfides and selenides of copper and indium. In addition to the presentation of essential deposition conditions, structural and compositional data are given and, where applicable, optical and electrical characteristics. (ERA citation 12:045820)