Heteroepitaxy of GaAs on Si: Methods to Decrease the Defect Density in the Epilayer.

摘要

In this paper, the fundamental mechanisms of defects formation and procedures used to improve the structural quality of GaAs grown on Si are discussed. Patterned growth, strained-layer superlattices, and proper thermal cycling are promising approaches to help achieve high quality GaAs layers grown on Si substrates. 55 refs., 9 figs.