Monolithically integrated GaAs thyristor-transistor as a hardened optically-triggered switch

摘要

Optically-triggered thyristors are hardened to high x-ray dose rates by the addition of a monolithically integrated compensating phototransistor. Tests of these devices show that sensitivity to radiation-induced switching is reduced by a factor of ten compared to conventional two-terminal thyristors (to 2 (times) 10(sup 9) Rad (Si)/sec). 3 refs., 5 figs.