Purity of electronic grade 1,1,2-trichlorotrifluoroethane by gas chromatography. Final report.

摘要

A gas chromatography (GC) method was developed to determine the purity of electronic grade 1,1,2-trichlorotrifluoroethane (TCTFE) for use in cleaning electronic components. High purity TCTFE is required to assure that the impurities would not inhibit or increase solvency characteristics. The low ppm chlorinated hydrocarbon (CHC) and chlorofluorocarbon (CFC) impurities were separated on a GC packed column containing a polydimethylsiloxane stationary phase and helium as the carrier gas. Flame ionization detected the resolved impurities as they eluted from the column. The standard addition method and computer intergration was used for quantitation. The concentration of known and unknown impurities were added together and subtracted from 100% to obtain the percent purity of TCTFE. The relative standard deviation (RSD) for ten replicate peak area determinations varied from 2 to 4% for most of the known impurities. The RSD for calculating ten replicate concentrations for two known impurities in the same sample was 2.8% for the 2.4 ppm (w/w) impurity and 1.3% for the 12.4 ppm impurity. 2 refs., 1 fig., 6 tabs.