High voltage picosecond pulse generation using avalanche diodes.

摘要

The generation of kilovolt-level sub-100ps wide pulses using the avalanche transit-time effect in abrupt junction P+NN+ silicon diodes is described and the basic theory for this ''single-shot'' mode of the microwave TRAPATT oscillator is discussed. We then present a computationally efficient SPICE model and compare simulations to lab data for two basic circuit configurations. 7 refs., 8 figs.