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CMOS IC fault models, physical defect coverage, and I(sub DDQ) testing.

机译：CmOs IC故障模型，物理缺陷覆盖和I（子DDQ）测试。

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The development of the stuck-at fault (SAF) model is reviewed with emphasis on its relationship to CMOS integrated circuit (IC) technologies. The ability of the SAF model to represent common physical defects in CMOS ICs is evaluated. A test strategy for d ...

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作者
R. R. Fritzemeier J. M. Soden C. F. Hawkins;
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年度 1991
页码 1-10
总页数 10
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
CMOS; Defects; EDB/426000; Electric Currents; Integrated Circuits; MOS Transistors; Power Supplies; Quality Control; Testing;

机译：CmOs;缺陷; EDB / 426000;电流;集成电路; mOs晶体管;电源;质量控制;测试;

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1. Defect portion detection and it's mode classification in CMOS manufacturing process using fault diagnosis technique by I{sub}(DDQ) [J] . Masaru Sanada, Kazuo Uehira, Eigo Fuse 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2000,第486期

机译：使用I {sub}（DDQ）的故障诊断技术在CMOS制造过程中进行缺陷部分检测及其模式分类
2. Defect portion detection and it's mode classification in CMOS manufacturing process using fault diagnosis technique by I{sub}(DDQ) [J] . Masaru Sanada, Kazuo Uehira, Eigo Fuse 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2000,第488期

机译：使用I {sub}（DDQ）的故障诊断技术在CMOS制造过程中进行缺陷部分检测及其模式分类
3. Defect portion detection and it's mode classification in CMOS manufacturing process using fault diagnosis technique by I{sub}(DDQ) [J] . Masaru Sanada, Kazuo Uehira, Eigo Fuse 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2000,第486期

机译：缺陷部分检测和IT在CMOS制造过程中使用故障诊断技术在CMOS制造过程中的模式分类（DDQ）
4. CMOS IC fault models, physical defect coverage, and I_DDQtesting [C] . Fritzemeier R.R., Hawkins C.F., Soden J.M. Logic in Computer Science, 1997. LICS '97. Proceedings . 1997

机译：CMOS IC故障模型，物理缺陷覆盖率和I _{DDQ 测试}
5. Fault simulation and fault modeling by I(DDQ) testing. [D] . Kowdley, Rajashekar. 2006

机译：通过I（DDQ）测试进行故障仿真和故障建模。
6. Modeling defects and plasticity in MgSiO3 post-perovskite: Part 1—generalized stacking faults [O] . Alexandra M. Goryaeva, Philippe Carrez, Patrick Cordier -1

机译：钙钛矿后MgSiO3的建模缺陷和可塑性：第1部分—广义堆积断层
7. Fault Modeling of ECL for High Fault Coverage of Physical Defects [O] . Sankaran M. Menon, Yashwant K. Malaiya, Anura P. Jayasumana 1996

机译：ECL造型ECL对物理缺陷的高故障覆盖

CMOS IC fault models, physical defect coverage, and I(sub DDQ) testing.

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