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Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125(degrees)C storage

机译：由125（度）C存储引起的基于mEsFET的Gaas mmIC的参数漂移分析

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摘要

Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125(degrees)C and 150(degrees)C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.

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Dreike, P L; Barton, D L; Sandoval, CE;
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年度 1992
页码 1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Integrated circuits; EDB/426000; EDB/360606; Microwave circuits;

机译：集成电路; EDB / 426000; EDB / 360606;微波电路;

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1. A Novel Approach to the Design of MESFET-based MMIC Switches Using Common-gate Parameter Extraction [J] . Rajesh Kumar Prabakaran, Ananjan Basu, Shiban K. Koul IETE Journal of Research . 2011,第5期

机译：基于共栅参数提取的基于MESFET的MMIC开关设计的新方法
2. An SiC MESFET-Based MMIC Process [J] . Sudow M., Andersson K., Billstrom N., IEEE Transactions on Microwave Theory and Techniques . 2006,第期

机译：基于SiC MESFET的MMIC工艺
3. A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module [J] . Akihiko Hirata, Hiroki Sugiyama, Hiroyuki Takahashi, IEICE Electronics Express . 2009,第24期

机译：125 GHz 140 mW InGaAs / InP复合通道HEMT MMIC功率放大器模块
4. Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125 degrees C storage [C] . Dreike P.L., Barton D.L., Sandoval C.E. Reliability Physics Symposium, 1993. 31st Annual Proceedings., International . 1993

机译：基于MESFET的GaAs MMIC因125摄氏度存储而引起的参数漂移分析
5. Ion-implanted GaAs MESFET MMICs for 77-GHz automotive radar. [D] . Shimon, Robert Leon. 2000

机译：用于77 GHz汽车雷达的离子注入式GaAs MESFET MMIC。
6. Microstructure Characterization and Interfacial Reactions between Au-Sn Solder and Different Back Metallization Systems of GaAs MMICs [O] . Na Wu, Yongfang Hu, Shufeng Sun 2020

机译：GaAs MMIC的Au-Sn焊料与不同背面金属化系统之间的微观结构表征和界面反应
7. GaAs MMICs on the road to recovery, as GaAs digital ICs lose to silicon [O] . 2003

机译：由于GaAs数字IC输给了硅芯片，GaAs MMIC即将恢复
8. Design and Evaluation of a GaAs MMIC X-Band Active RC Quadrature Power Divider(Ontwerp en Evaluatie van een GaAs MMIC X-Band Actieve RC Quadratuur) [R] . Henkus, J. C. 1991

机译：Gaas mmIC X波段有源RC正交功率分配器的设计和评估（Ontwerp en Evaluatie van een Gaas mmIC X-Band actieve RC Quadratuur）

Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125(degrees)C storage

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