Plasma, photon, and beam synthesis of diamond films and multilayered structures. Progress report, July 1, 1990--September 1992

摘要

In the area of nucleation, it was discovered that C(sub 70) thin films are perfect substitutes for diamond seeds in the growth of diamond films. This research, along with a careful study of diamond growth on carbon ion implanted single crystal copper, have clearly demonstrated that structured carbon is the best precursor for nucleation and growth of diamond films on non-diamond surfaces. In addition, by using fluorine chemistry during diamond growth, it has been shown that diamond films can grow on carbide substrates without the pretreatment of diamond seeding. The growth rates are higher and the film adhesion is much improved.