Microwave joining of silicon carbide using several different approaches.

摘要

Microwave joining of sintered silicon carbide, both to itself and reaction bonded silicon carbide, has been accomplished in a single-mode rectangular resonant cavity. Several approaches using different interlayer materials were employed to join sintered silicon carbide. Effective joining of reaction bonded silicon carbide to itself and sintered silicon carbide was accomplished without the use of any interlayer material in the single-mode resonant cavity as well as in a multi-mode oven. Specimens cut from 3/8'' diameter-rods were joined in the single-mode cavity, whereas a variety of arbitrary shapes and larger specimens (of reaction bonded silicon carbide) were joined in the multi-mode oven.