An ultra-high-capacity multi-data-layer ROM

摘要

We have developed an ultra-high-capacity double-sided multi-data-layer ROM that includes additional UV-cured-resin pace-layers on two polycarbonate (PC) substrates. This ROM is made using the photo-polymerization (2P) method aid has a structure that bonds the two substrates together. In a double-sided dual-data-layer ROM, using the smallest mark size of 0.44 µm with a 0.74µm track-pitch for each layer provides a total data capacity of 17 GB using the 8-16 modulation method Each side of the double-sided dual-data-layer ROM consists of a Si-rich silicon nitride semi-reflective layer (layer 0 or 2) on a 570µm-thick PC substrate and an AI reflective layer (layer 1 or 3) on an additional 50µm-thick space layer. We achieved a base jitter of less than 8% and a radial tilt margin of 0.7° for all four data layers. We also examined the double-sided multi-data-layer ROM disc structure, aid demonstrated the feasibility of the double-sided m-data-layer ROM that includes a total of six layers and has an ultra-high capacity of 25.5 GB