Assessment of Potential Nonlinear Circuit Models for the Characterization ofResonant Tunneling Diodes

摘要

The intrinsically fast process of resonant tunneling through double barrierheterostructures along with the existence of negative differential resistance in the current-voltage characteristic of these structures has led to their implementation as sources for high frequency electromagnetic energy. While sources based upon resonant tunneling diodes (RTD's) have produced frequency of oscillations up to 712 GHz, only microwatt levels of performance have been achieved above 100 GHz. Since stability criteria play a critical role in determining the deliverable power of any oscillator, a physically accurate equivalent-circuit model for the RTD is extremely important for optimizing the dynamics of the device-cavity package. This study identifies a distinctly new equivalent circuit model for characterizing the modes of oscillation in RTD-based sources. Specifically, in order to exhibit the fundamental self-oscillations and the overall I-V characteristics (plateau structure and hysteresis) observed experimentally, an accurate circuit model of the RTD must incorporate: (1) a quantum-well inductance which directly chokes the nonlinear conductance and (2) a nonlinear access resistance, associated with the accumulation of charge in the injection region of the double barriers, with a nonlocal dependence on the bias across the double barrier structure.