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Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas

机译：磁控反应离子刻蚀Gaas和aIGaas在CH4 / H2 / ar等离子体中的应用

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Magnetron reactive ion etching of GaAs and AlGaAs has been investigated inCH4/H2/Ar gas mixtures. Etch rate was determined as a function of gas composition, power density (0.4-1.0W/cm2), pressure (6-25 mTorr), and total flow rate (20-40 sccm). Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for several anneal temperatures (3000C, 4000C).

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作者
McLane, G. F.; Cooke, P.; Moerkirk, R. P.;
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年度 1996
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总页数 15
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Etching; Thermal properties; Annealing; Gallium arsenides; Aluminum galliumarsenides; Reactivities; Ion beams; Hydrogen; Methane; Argon; Magnetrons;

机译：蚀刻;热性能;退火;砷化镓;铝镓铝;反应活性;离子束;氢;甲烷;氩;磁控管;

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专利

1. Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AIGaAs materials [J] . Michael K. Connors, Jason J. Plant, Kevin G. Ray, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2013,第2期

机译：为改善GaAs / AIGaAs材料的感应耦合等离子体反应离子刻蚀而开发的腔室调节工艺
2. Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 °C [J] . Wieczorek Andreas, Djara Vladimir, Peters Frank H., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2012,第5期

机译：电极在20°C时在基于Cl2 / CH4 / H2的化学中对InP / InGaAsP进行电感耦合等离子体深度蚀刻
3. Ion molecule and dust particle formation in Ar/CH4, Ar/C2H2 and Ar/C3H6 radio-frequency plasmas [J] . Do HT, Thieme G, Frohlich M, Contributions to Plasma Physics . 2005,第5a6期

机译：Ar / CH4，Ar / C2H2和Ar / C3H6射频等离子体中离子分子和尘埃颗粒的形成
4. Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures [C] . Kuang-Po Hsueh, Ren-Jie Hou, Cheng-Huang Kuo, 2008亚太光通信会议（Asia-Pacific Optical Communications 2008）论文集 . 2008

机译：使用H2 / CH4和H2 / CH4 / Ar混合物对ZnO进行反应性离子刻蚀
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Microwave Plasma-Activated Chemical Vapor Depositionof Nitrogen-Doped Diamond. II: CH4/N2/H2 Plasmas [O] . BenjaminS. Truscott, Mark W. Kelly, Katie J. Potter, -1

机译：微波等离子体化学气相沉积掺氮钻石。 II：CH4 / N2 / H2等离子
7. CH4/H2/Ar ECR plasma etching for AlGaAs/InGaAs/GaAs pseudomorphic HFETs [O] . J.G. van Hassel, C.M. van Es, P.A.M. Nouwens 1995

机译：AlGaAs / InGaAs / GaAs假形象HFET的CH4 / H2 / AR ECR等离子蚀刻

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas

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