Radiation-Hard High-Efficiency InP Space Solar Cell Development. Phase 1

摘要

The efficiency of InP cells was improved to 19.1% AM0, using a cell fabricationprocess amenable to scale-up to production levels, and increasing the cell area to 4 cm2. An n+/p/p+ shallow-homojunction structure, fabricated by metalorganic chemical vapor deposition was used for this work. The emitter thickness was in the neighborhood of 30 nm, and a graded doping profile (front-surface-field) was used. Two hundred cells and two complete 20-cell panels were fabricated for space flight tests. Thermal cycling and radiation tests were carried out on these cells.